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	Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs
	Lv, Yawei; Liu, Anqi; Huang, Qijun; Chang, Sheng; Qin, Wenjing; Ye, Shizhuo; Wang, Hao; He, Jin
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
卷号	39期号:7
关键词	Graphene nanoribbon stone-wales (SW) defects doping adsorption MOSFET first-principles
ISSN号	0741-3106
DOI	10.1109/LED.2018.2832632
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4212386
专题	武汉大学
推荐引用方式 GB/T 7714	Lv, Yawei,Liu, Anqi,Huang, Qijun,et al. Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs[J]. IEEE ELECTRON DEVICE LETTERS,2018,39(7).
APA	Lv, Yawei.,Liu, Anqi.,Huang, Qijun.,Chang, Sheng.,Qin, Wenjing.,...&He, Jin.(2018).Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs.IEEE ELECTRON DEVICE LETTERS,39(7).
MLA	Lv, Yawei,et al."Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs".IEEE ELECTRON DEVICE LETTERS 39.7(2018).

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