Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs | |
Lv, Yawei; Liu, Anqi; Huang, Qijun; Chang, Sheng; Qin, Wenjing; Ye, Shizhuo; Wang, Hao; He, Jin | |
刊名 | IEEE ELECTRON DEVICE LETTERS
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2018 | |
卷号 | 39期号:7 |
关键词 | Graphene nanoribbon stone-wales (SW) defects doping adsorption MOSFET first-principles |
ISSN号 | 0741-3106 |
DOI | 10.1109/LED.2018.2832632 |
URL标识 | 查看原文 |
收录类别 | SCIE |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4212386 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Lv, Yawei,Liu, Anqi,Huang, Qijun,et al. Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs[J]. IEEE ELECTRON DEVICE LETTERS,2018,39(7). |
APA | Lv, Yawei.,Liu, Anqi.,Huang, Qijun.,Chang, Sheng.,Qin, Wenjing.,...&He, Jin.(2018).Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs.IEEE ELECTRON DEVICE LETTERS,39(7). |
MLA | Lv, Yawei,et al."Restraining Strategy of the Stone-Wales Defect Effect on Graphene Nanoribbon MOSFETs".IEEE ELECTRON DEVICE LETTERS 39.7(2018). |
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