| Carrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate | |
| Ma, Yuan-Xiao; Han, Chuan-Yu; Lai, P.T. | |
| 2016 | |
| 关键词 | E beam evaporation Gate electrodes Heavily doped silicons High- k Metal gate Organic thin film transistors Pd gates Pentacenes |
| 页码 | 974-977 |
| 会议录 | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
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| URL标识 | 查看原文 |
| ISSN号 | 9781467397179 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2952592 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Ma, Yuan-Xiao,Han, Chuan-Yu,Lai, P.T.. Carrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate[C]. 见:. |
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