Carrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate | |
Ma, Yuan-Xiao; Han, Chuan-Yu; Lai, P.T. | |
2016 | |
关键词 | E beam evaporation Gate electrodes Heavily doped silicons High- k Metal gate Organic thin film transistors Pd gates Pentacenes |
页码 | 974-977 |
会议录 | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings |
URL标识 | 查看原文 |
ISSN号 | 9781467397179 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2952592 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Ma, Yuan-Xiao,Han, Chuan-Yu,Lai, P.T.. Carrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate[C]. 见:. |
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