QQ客服 官方微博 反馈留言

	Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan
	Xu, XL; Liu, HT; Shi, CS; Zhao, YW; Fung, S; Beling, CD
刊名	Journal of applied physics
	2001-12-15
卷号	90期号:12页码:6130-6134
ISSN号	0021-8979
通讯作者	Xu, xl()
英文摘要	In our recent report, [xu , appl. phys. lett. 76, 152 (2000)], profile distributions of five elements in the gan/sapphire system have been obtained using secondary ion-mass spectroscopy. the results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. the further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (o-n), but also from the gallium-site silicon (si-ga) donors, with activation energies 2 mev (for o-n) and 42 mev (for si-ga), respectively. on the other hand, al incorporated on the ga sublattice reduces the concentration of compensating ga-vacancy acceptors. the two-donor two-layer conduction, including hall carrier concentration and mobility, has been modeled by separating the gan film into a thin interface layer and a main bulk layer of the gan film. the bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. si-ga and o-n should also be shallow donors and v-ga-o or v-ga-al should be compensation sites in the bulk layer. the best fits for the hall mobility and the hall concentration in the bulk layer were obtained by taking the acceptor concentration n-a=1.8x10(17) cm(-3), the second donor concentration n-d2=1.0x10(18) cm(-3), and the compensation ratio c=n-a/n-d1=0.6, which is consistent with rode's theory. saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (c) 2001 american institute of physics.
WOS关键词	LIGHT-EMITTING DIODES ; GALLIUM NITRIDE ; YELLOW LUMINESCENCE ; ELECTRON ; PHOTOLUMINESCENCE ; EPILAYERS ; VACANCIES ; INTERFACE ; MECHANISM ; ENERGY
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000172489800048
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429085
专题	半导体研究所
通讯作者	Xu, XL
作者单位	1.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China 3.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Xu, XL,Liu, HT,Shi, CS,et al. Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan[J]. Journal of applied physics,2001,90(12):6130-6134.
APA	Xu, XL,Liu, HT,Shi, CS,Zhao, YW,Fung, S,&Beling, CD.(2001).Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan.Journal of applied physics,90(12),6130-6134.
MLA	Xu, XL,et al."Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan".Journal of applied physics 90.12(2001):6130-6134.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。