Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan | |
Xu, XL; Liu, HT; Shi, CS; Zhao, YW; Fung, S; Beling, CD | |
刊名 | Journal of applied physics
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2001-12-15 | |
卷号 | 90期号:12页码:6130-6134 |
ISSN号 | 0021-8979 |
通讯作者 | Xu, xl() |
英文摘要 | In our recent report, [xu , appl. phys. lett. 76, 152 (2000)], profile distributions of five elements in the gan/sapphire system have been obtained using secondary ion-mass spectroscopy. the results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. the further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (o-n), but also from the gallium-site silicon (si-ga) donors, with activation energies 2 mev (for o-n) and 42 mev (for si-ga), respectively. on the other hand, al incorporated on the ga sublattice reduces the concentration of compensating ga-vacancy acceptors. the two-donor two-layer conduction, including hall carrier concentration and mobility, has been modeled by separating the gan film into a thin interface layer and a main bulk layer of the gan film. the bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. si-ga and o-n should also be shallow donors and v-ga-o or v-ga-al should be compensation sites in the bulk layer. the best fits for the hall mobility and the hall concentration in the bulk layer were obtained by taking the acceptor concentration n-a=1.8x10(17) cm(-3), the second donor concentration n-d2=1.0x10(18) cm(-3), and the compensation ratio c=n-a/n-d1=0.6, which is consistent with rode's theory. saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (c) 2001 american institute of physics. |
WOS关键词 | LIGHT-EMITTING DIODES ; GALLIUM NITRIDE ; YELLOW LUMINESCENCE ; ELECTRON ; PHOTOLUMINESCENCE ; EPILAYERS ; VACANCIES ; INTERFACE ; MECHANISM ; ENERGY |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000172489800048 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2429085 |
专题 | 半导体研究所 |
通讯作者 | Xu, XL |
作者单位 | 1.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China 3.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, XL,Liu, HT,Shi, CS,et al. Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan[J]. Journal of applied physics,2001,90(12):6130-6134. |
APA | Xu, XL,Liu, HT,Shi, CS,Zhao, YW,Fung, S,&Beling, CD.(2001).Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan.Journal of applied physics,90(12),6130-6134. |
MLA | Xu, XL,et al."Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-gan".Journal of applied physics 90.12(2001):6130-6134. |
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