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	High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric
	Gao, Yana[1]; Li, Xifeng[2]; Chen, Longlong[3]; Shi, Jifeng[4]; Sun, Xiao Wei[5]; Zhang, Jianhua[6]
刊名	IEEE ELECTRON DEVICE LETTERS
	2014
卷号	35页码:554-556
关键词	Al-doped ZrO2 amorphrous high mobility solution thin film transistor (TFT)
ISSN号	0741-3106
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2275884
专题	上海大学
作者单位	1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Gao, Yana[1],Li, Xifeng[2],Chen, Longlong[3],et al. High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric[J]. IEEE ELECTRON DEVICE LETTERS,2014,35:554-556.
APA	Gao, Yana[1],Li, Xifeng[2],Chen, Longlong[3],Shi, Jifeng[4],Sun, Xiao Wei[5],&Zhang, Jianhua[6].(2014).High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric.IEEE ELECTRON DEVICE LETTERS,35,554-556.
MLA	Gao, Yana[1],et al."High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric".IEEE ELECTRON DEVICE LETTERS 35(2014):554-556.

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