High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric | |
Gao, Yana[1]; Li, Xifeng[2]; Chen, Longlong[3]; Shi, Jifeng[4]; Sun, Xiao Wei[5]; Zhang, Jianhua[6] | |
刊名 | IEEE ELECTRON DEVICE LETTERS |
2014 | |
卷号 | 35页码:554-556 |
关键词 | Al-doped ZrO2 amorphrous high mobility solution thin film transistor (TFT) |
ISSN号 | 0741-3106 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2275884 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. |
推荐引用方式 GB/T 7714 | Gao, Yana[1],Li, Xifeng[2],Chen, Longlong[3],et al. High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric[J]. IEEE ELECTRON DEVICE LETTERS,2014,35:554-556. |
APA | Gao, Yana[1],Li, Xifeng[2],Chen, Longlong[3],Shi, Jifeng[4],Sun, Xiao Wei[5],&Zhang, Jianhua[6].(2014).High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric.IEEE ELECTRON DEVICE LETTERS,35,554-556. |
MLA | Gao, Yana[1],et al."High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric".IEEE ELECTRON DEVICE LETTERS 35(2014):554-556. |
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