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	Effect of Benzoyl Peroxide/N, N-Dimethyl aniline initiating system on material removal rate in abrasive-free polishing of hard disk substrate
	Jiang, Ting[1]; Lei, Hong[2]
	2014
会议名称	International Conference on Planarization CMP Technology (ICPT)
页码	325-329
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2275846
专题	上海大学
作者单位	1.[1]Shanghai Univ, Res Ctr Nanosci & Nanotechnol, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Res Ctr Nanosci & Nanotechnol, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Jiang, Ting[1],Lei, Hong[2]. Effect of Benzoyl Peroxide/N, N-Dimethyl aniline initiating system on material removal rate in abrasive-free polishing of hard disk substrate[C]. 见:International Conference on Planarization CMP Technology (ICPT).

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