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	The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode
	Guo, Erjuan[1]; Zeng, Zhigang[2]; Zhang, Yan[3]; Long, Xiao[4]; Zhou, Haijun[5]; Wang, Xiaohong[6]
刊名	MICROELECTRONICS RELIABILITY
	2016
卷号	62页码:63-69
关键词	Schottky diodes Ge Annealing Ideality factor Barrier height
ISSN号	0026-2714
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2233668
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 3.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 4.Shanghai Key Lab High Temp Superconductors, Shanghai, Peoples R China. 5.[3]Shanghai Univ, Dept Mat Sci & Engn, Shanghai 200072, Peoples R China. 6.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 7.[4]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 8.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 9.[5]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 10.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Guo, Erjuan[1],Zeng, Zhigang[2],Zhang, Yan[3],et al. The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode[J]. MICROELECTRONICS RELIABILITY,2016,62:63-69.
APA	Guo, Erjuan[1],Zeng, Zhigang[2],Zhang, Yan[3],Long, Xiao[4],Zhou, Haijun[5],&Wang, Xiaohong[6].(2016).The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode.MICROELECTRONICS RELIABILITY,62,63-69.
MLA	Guo, Erjuan[1],et al."The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode".MICROELECTRONICS RELIABILITY 62(2016):63-69.

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