The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode | |
Guo, Erjuan[1]; Zeng, Zhigang[2]; Zhang, Yan[3]; Long, Xiao[4]; Zhou, Haijun[5]; Wang, Xiaohong[6] | |
刊名 | MICROELECTRONICS RELIABILITY |
2016 | |
卷号 | 62页码:63-69 |
关键词 | Schottky diodes Ge Annealing Ideality factor Barrier height |
ISSN号 | 0026-2714 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2233668 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 3.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 4.Shanghai Key Lab High Temp Superconductors, Shanghai, Peoples R China. 5.[3]Shanghai Univ, Dept Mat Sci & Engn, Shanghai 200072, Peoples R China. 6.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 7.[4]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 8.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 9.[5]Shanghai Univ, Dept Phys, Coll Sci, Shanghai 200444, Peoples R China. 10.Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. |
推荐引用方式 GB/T 7714 | Guo, Erjuan[1],Zeng, Zhigang[2],Zhang, Yan[3],et al. The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode[J]. MICROELECTRONICS RELIABILITY,2016,62:63-69. |
APA | Guo, Erjuan[1],Zeng, Zhigang[2],Zhang, Yan[3],Long, Xiao[4],Zhou, Haijun[5],&Wang, Xiaohong[6].(2016).The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode.MICROELECTRONICS RELIABILITY,62,63-69. |
MLA | Guo, Erjuan[1],et al."The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode".MICROELECTRONICS RELIABILITY 62(2016):63-69. |
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