High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录) | |
Lin, Zhenguo[1]; Lan, Linfeng[1]; Xiao, Peng[1]; Sun, Sheng[1]; Li, Yuzhiq[1]; Song, Wei[1]; Gao, Peixiong[1]; Wang, Lei[1]; Ning, Honglong[1]; Peng, Junbiao[1] | |
刊名 | Applied Physics Letters |
2015 | |
卷号 | 107 |
关键词 | Annealing Electron microscopy Energy dispersive spectroscopy Indium Neodymium Thin film transistors Thin films X ray diffraction X ray spectroscopy |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2211979 |
专题 | 华南理工大学 |
作者单位 | [1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China |
推荐引用方式 GB/T 7714 | Lin, Zhenguo[1],Lan, Linfeng[1],Xiao, Peng[1],等. High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录)[J]. Applied Physics Letters,2015,107. |
APA | Lin, Zhenguo[1].,Lan, Linfeng[1].,Xiao, Peng[1].,Sun, Sheng[1].,Li, Yuzhiq[1].,...&Peng, Junbiao[1].(2015).High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录).Applied Physics Letters,107. |
MLA | Lin, Zhenguo[1],et al."High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录)".Applied Physics Letters 107(2015). |
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