A Region-Based Through-Silicon via Repair Method for Clustered Faults | |
Nie, M; Yan, AB; Liang, HG; Ni, TM; Huang, ZF; Xu, XM | |
刊名 | IEICE TRANSACTIONS ON ELECTRONICS |
2017 | |
卷号 | E100C No.12页码:1108-1117 |
关键词 | 3D ICs yield enhancement TSV redundancy reparability additional delay overhead |
ISSN号 | 1745-1353 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2204789 |
专题 | 安徽大学 |
作者单位 | 1.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China 2.Anhui Univ, Sch Comp Sci & Technol, Hefei 230009, Anhui, Peoples R China 3.Hefei Univ Technol, Sch Comp & Informat, Hefei 230009, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Nie, M,Yan, AB,Liang, HG,et al. A Region-Based Through-Silicon via Repair Method for Clustered Faults[J]. IEICE TRANSACTIONS ON ELECTRONICS,2017,E100C No.12:1108-1117. |
APA | Nie, M,Yan, AB,Liang, HG,Ni, TM,Huang, ZF,&Xu, XM.(2017).A Region-Based Through-Silicon via Repair Method for Clustered Faults.IEICE TRANSACTIONS ON ELECTRONICS,E100C No.12,1108-1117. |
MLA | Nie, M,et al."A Region-Based Through-Silicon via Repair Method for Clustered Faults".IEICE TRANSACTIONS ON ELECTRONICS E100C No.12(2017):1108-1117. |
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