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	Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance
	Ren, Bing[1]; Liao, Meiyong[2]; Sumiya, Masatomo[3]; Wang, Linjun[4]; Koide, Yasuo[5]; Sang, Liwen[6]
刊名	APPLIED PHYSICS EXPRESS
	2017
卷号	10
ISSN号	1882-0778
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2193919
专题	上海大学
作者单位	[1]International Center for Material Nanoarchitectonics , National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan |School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China [2]Wide Bandgap Materials Group, National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan [3]Wide Bandgap Materials Group, National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan [4]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China [5]Research Network and Facility Services Division, National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan[6]International Center for Material Nanoarchitectonics , National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan
推荐引用方式 GB/T 7714	Ren, Bing[1],Liao, Meiyong[2],Sumiya, Masatomo[3],et al. Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance[J]. APPLIED PHYSICS EXPRESS,2017,10.
APA	Ren, Bing[1],Liao, Meiyong[2],Sumiya, Masatomo[3],Wang, Linjun[4],Koide, Yasuo[5],&Sang, Liwen[6].(2017).Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance.APPLIED PHYSICS EXPRESS,10.
MLA	Ren, Bing[1],et al."Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance".APPLIED PHYSICS EXPRESS 10(2017).

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