Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance | |
Ren, Bing[1]; Liao, Meiyong[2]; Sumiya, Masatomo[3]; Wang, Linjun[4]; Koide, Yasuo[5]; Sang, Liwen[6] | |
刊名 | APPLIED PHYSICS EXPRESS |
2017 | |
卷号 | 10 |
ISSN号 | 1882-0778 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2193919 |
专题 | 上海大学 |
作者单位 | [1]International Center for Material Nanoarchitectonics , National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan |School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China [2]Wide Bandgap Materials Group, National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan [3]Wide Bandgap Materials Group, National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan [4]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China [5]Research Network and Facility Services Division, National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan[6]International Center for Material Nanoarchitectonics , National Institute for Materials Science , Tsukuba, Ibaraki, 305-0044, Japan |
推荐引用方式 GB/T 7714 | Ren, Bing[1],Liao, Meiyong[2],Sumiya, Masatomo[3],et al. Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance[J]. APPLIED PHYSICS EXPRESS,2017,10. |
APA | Ren, Bing[1],Liao, Meiyong[2],Sumiya, Masatomo[3],Wang, Linjun[4],Koide, Yasuo[5],&Sang, Liwen[6].(2017).Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance.APPLIED PHYSICS EXPRESS,10. |
MLA | Ren, Bing[1],et al."Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance".APPLIED PHYSICS EXPRESS 10(2017). |
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