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	Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study
	Wang Fei-Fei; Dai Yue-Hua; Chen Zhen; Li Ning; Pan Zhi-Yong; Li Xiao-Feng; Jin Bo
刊名	Wuli Xuebao/Acta Physica Sinica
	2016
卷号	Vol.65 No.7
关键词	NONVOLATILE MEMORY SWITCHING MEMORIES GROWTH TRANSITION
ISSN号	1000-3290
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2158416
专题	安徽大学
作者单位	1.Chinese Acad Sci, Hefei Inst Phys Sci, Internet Network Informat Ctr, Hefei 230031, Peoples R China 2.Anhui Univ, Inst Elect & Informat Engn, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Wang Fei-Fei,Dai Yue-Hua,Chen Zhen,et al. Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study[J]. Wuli Xuebao/Acta Physica Sinica,2016,Vol.65 No.7.
APA	Wang Fei-Fei.,Dai Yue-Hua.,Chen Zhen.,Li Ning.,Pan Zhi-Yong.,...&Jin Bo.(2016).Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study.Wuli Xuebao/Acta Physica Sinica,Vol.65 No.7.
MLA	Wang Fei-Fei,et al."Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study".Wuli Xuebao/Acta Physica Sinica Vol.65 No.7(2016).

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