Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study | |
Wang Fei-Fei; Dai Yue-Hua; Chen Zhen; Li Ning; Pan Zhi-Yong; Li Xiao-Feng; Jin Bo | |
刊名 | Wuli Xuebao/Acta Physica Sinica |
2016 | |
卷号 | Vol.65 No.7 |
关键词 | NONVOLATILE MEMORY SWITCHING MEMORIES GROWTH TRANSITION |
ISSN号 | 1000-3290 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2158416 |
专题 | 安徽大学 |
作者单位 | 1.Chinese Acad Sci, Hefei Inst Phys Sci, Internet Network Informat Ctr, Hefei 230031, Peoples R China 2.Anhui Univ, Inst Elect & Informat Engn, Hefei 230601, Peoples R China |
推荐引用方式 GB/T 7714 | Wang Fei-Fei,Dai Yue-Hua,Chen Zhen,et al. Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study[J]. Wuli Xuebao/Acta Physica Sinica,2016,Vol.65 No.7. |
APA | Wang Fei-Fei.,Dai Yue-Hua.,Chen Zhen.,Li Ning.,Pan Zhi-Yong.,...&Jin Bo.(2016).Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study.Wuli Xuebao/Acta Physica Sinica,Vol.65 No.7. |
MLA | Wang Fei-Fei,et al."Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study".Wuli Xuebao/Acta Physica Sinica Vol.65 No.7(2016). |
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