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科研机构
武汉理工大学 [5]
华南理工大学 [4]
西安交通大学 [3]
山东大学 [3]
大连理工大学 [2]
江苏大学 [2]
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内容类型
期刊论文 [36]
会议论文 [1]
发表日期
2015 [37]
学科主题
physics, m... [1]
材料科学与物理化学 [1]
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发表日期:2015
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Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties
期刊论文
APPLIED SURFACE SCIENCE, 2015, 卷号: 357, 页码: 282-286
作者:
Bian, Jiming
;
Wang, Minhuan
;
Miao, Lihua
;
Li, Xiaoxuan
;
Luo, Yingmin
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2017/03/01
Vanadium oxide
p-GaN
Pulsed laser deposition
Phase transition
Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model
期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 页码: 4
作者:
Rong Xi-Ming
;
Chen Jun
;
Li Jing-Tian
;
Zhuang Jun
;
Ning Xi-Jing
收藏
  |  
浏览/下载:198/0
  |  
提交时间:2018/05/31
condensing potential model
Ni-Al alloy
crystallization ability
pulsed laser deposition
Yb-doped passively mode-locked fiber laser with Bi2Te3-deposited
期刊论文
chinese physics b, 2015, 卷号: 24, 期号: 12, 页码: 124204
作者:
Li Lu
;
Yan Pei-Guang
;
Wang Yong-Gang
;
Duan Li-Na
;
Sun Hang
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2016/01/22
topological insulator
mode-locked lasers
pulsed laser deposition technology
fiber lasers
Weld pool oscillation frequency in pulsed gas tungsten arc welding with varying weld penetration
会议论文
Gothenburg, Sweden, August 24, 2015 - August 28, 2015
作者:
Shi, Yu
;
Zhang, Gang
;
Li, Chunkai
;
Gu, Yufen
;
Fan, Ding
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/11/15
Gas metal arc welding
Gas welding
High speed cameras
Image processing
Intelligent robots
Robot applications
Robotics
Tungsten
Complete joint penetrations
GTAW
Image processing algorithm
Laser vision
Oscillation frequency
Pulsed gas tungsten arc welding
Weld penetrations
Weld pool
Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up
期刊论文
Chinese physics b, 2015, 卷号: 24, 期号: 4, 页码: 6
作者:
Chen Rui
;
Han Jian-Wei
;
Zheng Han-Sheng
;
Yu Yong-Tao
;
Shangguang Shi-Peng
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/10
Single event latch-up
Transient-induced latch-up
Electro-static discharge
Pulsed laser
Fabrication gallium/graphene core-shell nanoparticles by pulsed laser deposition and their applications in surface enhanced Raman scattering
期刊论文
materials letters, 2015, 卷号: 143, 页码: 194-196
作者:
Ren, Xianpei
;
Zi, Wei
;
Wei, Qingbo
;
Liu, Shengzhong
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2015/11/17
Graphene
Raman
Nanoparticles
Pulsed laser deposition
Microstructures and properties of titanium nitride films prepared by pulsed laser deposition at different substrate temperatures
期刊论文
Applied Surface Science, 2015, 卷号: 357, 页码: 473-478
作者:
Guo HJ(国洪建)
;
Chen WY(陈文远)
;
Shan Y(陕钰)
;
Wang WZ(王文珍)
;
Zhang, Zhenyu
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2015/11/06
Titanium nitride film
Pulsed laser deposition (PLD)
Substrate temperature
Microstructure
Tribology property
Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 卷号: 62, 期号: 2, 页码: 565-570
作者:
Yu, Y. -T.
;
Han, J. -W.
;
Feng, G. -Q.
;
Cai, M. -H.
;
Chen, R.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2015/09/28
In-flight rate
pulsed laser
sensitivity mapping
single event latchup (SEL)
SRAM
Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up
期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 4, 页码: 46103
作者:
Chen Rui
;
Han Jian-Wei
;
Zheng Han-Sheng
;
Yu Yong-Tao
;
Shangguang Shi-Peng
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2015/09/28
single event latch-up
transient-induced latch-up
electro-static discharge
pulsed laser
Epitaxial growth of graphene thin film by pulsed laser deposition
期刊论文
Micro and Nano Letters, 2015, 卷号: 10, 期号: 11, 页码: 649-652
作者:
Wang, Jin*
;
Xiong, Zhengwei
;
Yu, Jian
;
Yin, Hongbu
;
Wang, Xuemin
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/04
pulsed laser deposition
vapour phase epitaxial growth
X-ray photoelectron spectra
graphene
thin films
Raman spectra
transmission electron microscopy
epitaxial growth
graphene thin film
pulsed laser deposition
X-ray photoelectron spectroscopy
XPS
carbon binding energy
Raman spectroscopy
high-resolution transmission electron microscopy
HRTEM
depositing temperature
single oriented crystal domains
temperature 873 K
C
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