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Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
ieee electron device letters, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Ding, K; Wang, CY; Zhang, BT; Zhang, Y; Guan, M; Cui, LJ; Zhang, YW; Zeng, YP; Lin, Z; Huang, F
收藏  |  浏览/下载：19/0  |  提交时间：2015/04/02
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05
Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708
作者:  Zhang XW
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：94/7  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:  Liu K;  Tan FR
收藏  |  浏览/下载：87/5  |  提交时间：2011/07/05
Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas 期刊论文
physical review b, 2011, 卷号: 84, 期号: 7, 页码: 75341
作者:  Jiang CY
收藏  |  浏览/下载：13/0  |  提交时间：2011/09/14
Stable organic solar cells employing MoO(3)-doped copper phthalocyanine as buffer layer 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 22, 页码: 9382-9385
Cao GH; Li LS; Guan M; Zhao J; Li YY; Zeng YP
收藏  |  浏览/下载：7/0  |  提交时间：2012/01/06
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载：40/4  |  提交时间：2011/07/05
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05

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