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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Research on energy characteristics of aerospace relay mirror system (EI CONFERENCE) 会议论文 2011 International Conference on Electronic and Mechanical Engineering and Information Technology, EMEIT 2011, August 12, 2011 - August 14, 2011, Harbin, China Liu C.; Zhong X.; Piao Y.; Jin G. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 Aerospace Relay Mirror System (ARMS) as a new concept weapon used in reflection of High Energy Laser (HEL) in space is studied. It extends the attacking range of Ground Based Laser (GBL) weapons enormously. Relevant researches have been carried out for many years. The structures and operating theory of the entire system consists of ground-based high energy laser weapon and space-based relay mirror. The main work of this study is focused on the analysis of relay mirror energy characteristics to deduce the relationship among the attacking range of weapon and diameter of ARMS and target irradiance. Calculation examples are also given. The results proved the strong points and feasibility of ARMS theoretically further. It is summarized that more importance should be attached to ARMS development. The results given in this paper can be reference of an actual ARMS system to some extends. 2011 IEEE.   Experimental researches on the one-dimensional photonic crystal microcavity (EI CONFERENCE) 会议论文 ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China He X.; Liu X.; Xie D.; Yu H.; Tong C.; Feng J. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 In experiments  the energy band structures of one-dimensional photonic crystal (1-D PC) is researched. We get the relation between the band gap width and the number of the layers  the dielectric indices contrast  the center wavelength. The microcavity of 1-D PC is made. We study the reflection and transmission characteristics of the microcavity. Experimental results indicate the microcavity of 1-D PC can get a high reflection coefficient and a good stability and substantiality of the membrane layers in air.   Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.   Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.