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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：金属研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie 收藏  |  浏览/下载：14/0  |  提交时间：2021/02/02 CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie 收藏  |  浏览/下载：40/0  |  提交时间：2021/02/02 CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie 收藏  |  浏览/下载：8/0  |  提交时间：2021/02/02 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials   VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie 收藏  |  浏览/下载：10/0  |  提交时间：2021/02/02 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials   Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文 APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Cui, Lijie;  Li, Yanbo 收藏  |  浏览/下载：6/0  |  提交时间：2021/02/02 ZnTe  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy   Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Li, Yanbo 收藏  |  浏览/下载：64/0  |  提交时间：2021/02/02 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials   Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 卷号: 12, 期号: 6, 页码: 233-237 作者:  Zhao, Jie;  Hu, Lizhong 收藏  |  浏览/下载：6/0  |  提交时间：2021/02/02 ZnO  Pulsed laser deposition  X-ray diffraction  Photoluminescence  Reflection high-energy electron diffraction   Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy 期刊论文 Journal of Crystal Growth, 2004, 卷号: 271, 期号: 1-2, 页码: 165-170 W. F. Xiang; H. B. Lu; Z. H. Chen; X. B. Lu; M. He; H. Tian; Y. L. Zhou; C. R. Li; X. L. Ma 收藏  |  浏览/下载：10/0  |  提交时间：2012/04/14 annealing  reflection high-energy electron diffraction  X-ray  diffraction  epitaxial growth  laser molecular beam epitaxy  LaAlO3 film  thin-films  buffer layers  in-situ  srtio3  si(100)  deposition  silicon  mocvd