|
已选(0)清除
条数/页： 排序方式：
|
| Current diffusion and efficiency droop in vertical light emitting diodes 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 017203
作者: R Q Wan ; T Li ; Z Q Liu ; X Y Yi ; J X Wang ; J H Li ; W H Zhu ; J M Li ; L C Wang
  收藏 | 浏览/下载：23/0 | 提交时间：2020/08/05 |
| Deep ultraviolet light-emitting diodes with improved performance via nanoporous AlGaN template 期刊论文
Optics Express, 2019, 卷号: 27, 期号: 4, 页码: 4917-4926
作者: L. Zhang; Y. N. Guo; J. C. Yan; Q. Q. Wu; X. C. Wei; J. X. Wang; J. M. Li
收藏 | 浏览/下载：21/0 | 提交时间：2020/08/05 |
| Stable, high power, high efficiency picosecond ultraviolet generation at 355 nm in K 3 B 6 O 10 Br crystal 期刊论文
Optics Communications, 2018, 卷号: 416, 页码: 71–76
作者: Z.Y. Hou ; L.R. Wang ; M.J. Xia ; D.X. Yan ; Q.L. Zhang ; L. Zhang ; L.J. Liu ; D.G. Xu ; D.X. Zhang ; X.Y. Wang ; R.K. Li ; C.T. Chen
收藏 | 浏览/下载：27/0 | 提交时间：2019/11/12 |
| XPS study of impurities in Si-doped AlN film 期刊论文
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：31/0 | 提交时间：2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：26/0 | 提交时间：2017/03/10 |
| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文
journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
收藏 | 浏览/下载：21/0 | 提交时间：2017/03/10 |
| GaN high electron mobility transistors with AlInN back barriers 期刊论文
journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏 | 浏览/下载：13/0 | 提交时间：2017/03/10 |
| Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
vacuum, 2016, 卷号: 129, 页码: 99-104
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏 | 浏览/下载：14/0 | 提交时间：2017/03/10 |
| Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles 期刊论文
applied surface science, 2016, 卷号: 388, 页码: 584-588
H.L. Kang; J.B. Lao; Z.P. Li; W.Q. Yao; C. Liu; J.Y. Wang
收藏 | 浏览/下载：23/0 | 提交时间：2017/03/10 |
| Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：13/0 | 提交时间：2016/03/23 |
