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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：新疆理化技术研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter 期刊论文 NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9 作者:  Wu, P (Wu, Ping) [1] , [2];  Wen, L (Wen, Lin) [3] , [4];  Xu, ZQ (Xu, Zhi-Qian) [1] , [2];  Jiang, YS (Jiang, Yun-Sheng) [1] , [2];  Guo, Q (Guo, Qi) [3] , [4] 收藏  |  浏览/下载：21/0  |  提交时间：2022/04/07 Integrated circuit  Totalionizingdose  Electromagneticradiation  Synergistic effect  Combined environment   Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127 作者:  Yang, ZK (Yang, Zhikang) [1] , [2];  Wen, L (Wen, Lin) [1];  Li, YD (Li, Yudong) [1];  Liu, BK (Liu, Bingkai) [1] , [2];  Fu, J (Fu, Jing) [1] , [2] 收藏  |  浏览/下载：22/0  |  提交时间：2022/06/21 Color CMOS Image Sensor  Radiation Damage  Total Ionizing Dose Effects  Bias Condition   Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao) 收藏  |  浏览/下载：19/0  |  提交时间：2017/09/14 SiGe heterojunction bipolar transistor  single event effect  three-dimensional numerical simulation  laser microbeam experiment   Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei) 收藏  |  浏览/下载：21/0  |  提交时间：2015/07/11 SiGe heterojunction bipolar transistor  single event effect  hardening design  dummy collector   3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors 期刊论文 Journal of Semiconductors, 2014, 卷号: 35, 期号: 4 作者:  Jinxin, Zhang;  Hongxia, Guo;  Lin, Wen;  Qi, Guo;  Jiangwei, Cui 收藏  |  浏览/下载：17/0  |  提交时间：2014/11/11 Hot-carrier effects on irradiated deep submicron NMOSFET 期刊论文 Journal of Semiconductors, 2014, 卷号: 35, 期号: 7 作者:  Cui, Jiangwei;  Zheng, Qiwen;  Yu, Xuefeng;  Cong, Zhongchao;  Zhou, Hang 收藏  |  浏览/下载：27/0  |  提交时间：2014/11/11 3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文 ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: - 作者:  Zhang Jin-Xin;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei 收藏  |  浏览/下载：29/0  |  提交时间：2013/11/07 SiGe heterojunction bipolar transistor  single event effect  charge collection  three-dimensional numerical simulation   Synthesis, crystal structure, optical properties and theoretical calculations of a new potassium lead pentaborate, KPbB5O9 期刊论文 JOURNAL OF MOLECULAR STRUCTURE, 2013, 卷号: 1049, 期号: 10, 页码: 473-478 作者:  Zhou Lin;  Pan Shilie;  Su Xin;  Yang Zhihua;  Wu Hongping 收藏  |  浏览/下载：41/0  |  提交时间：2013/11/07 KPbB5O9  Synthesis  Crystal structure  Theoretical calculations