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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   Thermal induced facet destructive feature of quantum cascade lasers 期刊论文 Applied physics letters, 2010, 卷号: 96, 期号: 14, 页码: 3 作者:  Zhang, Quande;  Liu, Feng-Qi;  Zhang, Wei;  Lu, Quanyong;  Wang, Lijun 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Laser beam effects  Quantum cascade lasers  Thermal conductivity   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：131/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Thermal induced facet destructive feature of quantum cascade lasers 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 14, 页码: art. no. 141117 Zhang QD (Zhang Quande); Liu FQ (Liu Feng-Qi); Zhang W (Zhang Wei); Lu QY (Lu Quanyong); Wang LJ (Wang Lijun); Li L (Li Lu); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：124/17  |  提交时间：2010/04/28 laser beam effects  quantum cascade lasers  thermal conductivity  MU-M  TEMPERATURE  OPERATION  PERFORMANCE   Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103 Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May) 收藏  |  浏览/下载：98/3  |  提交时间：2010/04/22 VAPOR-PHASE EPITAXY  TEMPERATURE ALN INTERLAYERS  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  REDUCTION  THICKNESS  NITRIDE  LAYERS   Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466 Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS 收藏  |  浏览/下载：57/4  |  提交时间：2010/03/08 VAPOR-PHASE EPITAXY  WURTZITE-TYPE CRYSTALS  THIN-FILMS  ALUMINUM NITRIDE  INTRINSIC STRESS  GAN  SAPPHIRE  AIN  DEPOSITION  STRAIN   A novel line-order of InAs quantum dots on GaAs 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 1-2, 页码: 69-73 作者:  Li CM;  Xu B;  Jin P 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 low dimensional structures  strain  molecular beam epitaxy  quantum dots  semiconducting III-V materials  SHAPE TRANSITION  PHOTOLUMINESCENCE  FABRICATION  DEPOSITION  WIRES  SITU