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科研机构
半导体研究所 [15]
内容类型
期刊论文 [14]
会议论文 [1]
发表日期
2011 [1]
2009 [2]
2006 [1]
2005 [1]
2003 [2]
2001 [4]
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学科主题
半导体材料 [7]
半导体物理 [6]
光电子学 [1]
半导体器件 [1]
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Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system
期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106
Jiang CY
;
Ma H
;
Yu JL
;
Liu Y
;
Chen YH
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2012/02/06
QUANTUM WIRES
OPTICAL-PROPERTIES
RECTIFICATION
FLUCTUATIONS
Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109
Yu HL
;
Zhang XM
;
Wang PF
;
Ni HQ
;
Niu ZC
;
Lai TS
收藏
  |  
浏览/下载:54/4
  |  
提交时间:2010/03/08
circular dichroism
diffraction gratings
diffusion
gallium arsenide
homodyne detection
III-V semiconductors
spin dynamics
spin polarised transport
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:
Qian X
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  |  
浏览/下载:83/7
  |  
提交时间:2010/03/08
aluminium compounds
carrier lifetime
gallium arsenide
high-frequency effects
III-V semiconductors
optical Kerr effect
semiconductor heterojunctions
spin dynamics
two-dimensional electron gas
Improved optical heterodyne methods for measuring. frequency responses of photodetectors
期刊论文
ieee journal of quantum electronics, 2006, 卷号: 42, 期号: 3-4, 页码: 241-248
Zhu NH
;
Wen JM
;
San HS
;
Huang HP
;
Zhao LJ
;
Wang W
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  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
frequency response
optical heterodyne method
photodetector
tunable laser
SELF-HOMODYNE TECHNIQUE
BANDWIDTH MEASUREMENTS
LINEWIDTH
RECEIVER
NOISE
FIBER
PHOTODIODE
RESOLUTION
LINESHAPE
SYSTEM
Alloy compositional fluctuation in InAlGaN epitaxial films
期刊论文
applied physics a-materials science & processing, 2005, 卷号: 80, 期号: 3, 页码: 649-652
Li, DB
;
Dong, X
;
Huang, J
;
Liu, X
;
Xu, Z
;
Zhang, Z
;
Wang, Z
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  |  
浏览/下载:21/0
  |  
提交时间:2010/03/17
MULTIPLE-QUANTUM WELLS
Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 84-90
作者:
Li DB
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  |  
浏览/下载:57/0
  |  
提交时间:2010/08/12
surfaces
X-ray diffraction
growth from high temperature solutions
metalorganic chemical vapor deposition
nitrides
semiconducting III-V materials
TIME-RESOLVED PHOTOLUMINESCENCE
QUANTUM-WELL
LUMINESCENCE
DIODES
GAN
Localized exciton dynamics in AlInGaN alloy
期刊论文
solid state communications, 2003, 卷号: 126, 期号: 8, 页码: 473-477
Huang JS
;
Dong X
;
Luo XD
;
Liu XL
;
Xu ZY
;
Ge WK
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  |  
浏览/下载:43/0
  |  
提交时间:2010/08/12
AlInGaN
quantum dots
hopping
stretched-exponential decay
MULTIPLE-QUANTUM WELLS
LIGHT-EMITTING-DIODES
TIME-RESOLVED PHOTOLUMINESCENCE
CHEMICAL-VAPOR-DEPOSITION
THERMAL-ACTIVATION
LUMINESCENCE
TRANSITIONS
RELAXATION
SILICON
LAYERS
Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Li LH
;
Pan Z
;
Zhang W
;
Lin YW
;
Wang XY
;
Wu RH
;
Ge WK
收藏
  |  
浏览/下载:100/7
  |  
提交时间:2010/08/12
molecular beam epitaxy
quantum wells
BAND-GAP ENERGY
PHOTOLUMINESCENCE
TEMPERATURE
GANXAS1-X
FILMS
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 501-505
作者:
Jiang DS
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  |  
浏览/下载:147/24
  |  
提交时间:2010/08/12
molecular beam epitaxy
quantum wells
semiconducting IIIV materials
LUMINESCENCE
GAASN
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:
Jiang DS
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
quantum wells
semiconducting IIIV materials
LUMINESCENCE
GAASN
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