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长春光学精密机械与物... [6]
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期刊论文 [5]
会议论文 [1]
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2023 [1]
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2005 [1]
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专题:长春光学精密机械与物理研究所
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Simultaneously improving the quality factor and outcoupling efficiency of organic light-emitting field- effect transistors with planar microcavity
期刊论文
Optics Express, 2023, 卷号: 31, 期号: 2, 页码: 2480-2491
作者:
Q. X. Gong
;
W. B. Zhang
;
J. R. He
;
F. Y. Ma
;
L. Song
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浏览/下载:1/0
  |  
提交时间:2024/07/03
Mesoporous Mn-Fe oxyhydroxides for oxygen evolution
期刊论文
Inorganic Chemistry Frontiers, 2022, 卷号: 9, 期号: 14, 页码: 3559-3565
作者:
J. Y. Han
;
M. Z. Zhang
;
X. Bai
;
Z. Y. Duan
;
T. M. Tang and J. Q. Guan
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  |  
浏览/下载:0/0
  |  
提交时间:2023/06/14
Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction
期刊论文
Crystengcomm, 2022, 卷号: 24, 期号: 38, 页码: 6642-6653
作者:
X. J. Liu
;
M. S. Liu
;
R. D. Zhu
;
B. H. Li
;
P. Wan
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  |  
浏览/下载:6/0
  |  
提交时间:2023/06/14
Six degrees of freedom vibration transmissibility measurement of flexural opto-mechanical structures with 3-axis acceleration sensors
期刊论文
Precision Engineering-Journal of the International Societies for Precision Engineering and Nanotechnology, 2014, 卷号: 38, 期号: 3, 页码: 561-568
Yuan W. Q.
;
Wu Z. H.
;
Sui Y. X.
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  |  
浏览/下载:13/0
  |  
提交时间:2015/04/24
Flat field concave holographic grating with broad spectral region and moderately high resolution
期刊论文
Applied Optics, 2012, 卷号: 51, 期号: 4, 页码: 509-514
Wu J. F.
;
Chen Y. Y.
;
Wang T. S.
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浏览/下载:10/0
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提交时间:2012/10/21
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE)
会议论文
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.
;
Wu C. X.
;
Wei Z. P.
;
Zhang Z. Z.
;
Zhao D. X.
;
Zhang J. Y.
;
Liu Y. C.
;
Shen D. Z.
;
Fan X. W.
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浏览/下载:21/0
  |  
提交时间:2013/03/25
In this paper
Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)
Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers
respectively. In PL spectra
two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature
and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases
the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm
only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
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