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Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 120, 期号: 21, 页码: 1-6
作者:  Hu, L.;  Lin, G. T.;  Luo, X.;  Wei, R. H.;  Zhu, X. B.
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