CORC

浏览/检索结果: 共9条,第1-9条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Li JB
收藏  |  浏览/下载:63/1  |  提交时间:2010/04/22
Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 20, 页码: art. no. 205416
Yang, AL; Wei, HY; Liu, XL; Song, HP; Fan, HB; Zhang, PF; Zheng, GL; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:59/0  |  提交时间:2010/03/08
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM
收藏  |  浏览/下载:85/1  |  提交时间:2010/03/08
Experimental study of a pulsed ytterbium-doped fibre laser with fast and slow saturable absorbers in a linear cavity 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 7, 页码: 1790-1792
Gan Y (Gan Yu); Xiang WH (Xiang Wang-Hua); Zhou XF (Zhou Xiao-Fang); Zhang GZ (Zhang Gui-Zhong); Zhang B (Zhang Bing); Wang YG (Wang Yong-Gang); Ma XY (Ma Xiao-Yu)
收藏  |  浏览/下载:36/0  |  提交时间:2010/04/11
Electronic structure of ZnO wurtzite quantum wires 期刊论文
european physical journal b, 2006, 卷号: 49, 期号: 4, 页码: 415-420
Xia JB (Xia J. B.); Zhanga XW (Zhang X. W.)
收藏  |  浏览/下载:26/0  |  提交时间:2010/04/11
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:129/0  |  提交时间:2010/08/12
Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文
2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997
作者:  Liu J
收藏  |  浏览/下载:16/0  |  提交时间:2010/11/15
Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112) 期刊论文
surface science, 1997, 卷号: 381, 期号: 1, 页码: 1-11
Ranke W; Xing YR
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/17
Effects of point defects on lattice parameters of semiconductors 期刊论文
physical review b, 1996, 卷号: 54, 期号: 12, 页码: 8516-8521
Chen NF; Wang YT; He HJ; Lin LY
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/17


©版权所有 ©2017 CSpace - Powered by CSpace