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科研机构
半导体研究所 [9]
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期刊论文 [8]
会议论文 [1]
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2010 [1]
2008 [2]
2006 [2]
2002 [1]
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1997 [1]
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半导体物理 [9]
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Tensile and compressive mechanical behavior of twinned silicon carbide nanowires
期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:
Li JB
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2010/04/22
Twinning
Nanotructures
Fracture
Buckling
Molecular dynamics
CHEMICAL-VAPOR-DEPOSITION
AB-INITIO CALCULATIONS
BETA-SIC NANOWIRES
LOW-TEMPERATURE
THIN-FILMS
SIMULATION
ELASTICITY
NANOTUBES
POLYTYPES
GROWTH
Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 20, 页码: art. no. 205416
Yang, AL
;
Wei, HY
;
Liu, XL
;
Song, HP
;
Fan, HB
;
Zhang, PF
;
Zheng, GL
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/03/08
LOW-TEMPERATURE GROWTH
OPTICAL-PROPERTIES
ZNO NANOWIRES
THIN-FILMS
NANORODS
MGXZN1-XO
ZINC
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD
期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ
;
Wang, XL
;
Guo, LC
;
Xiao, HL
;
Wang, CM
;
Ran, JX
;
Li, JP
;
Li, JM
收藏
  |  
浏览/下载:85/1
  |  
提交时间:2010/03/08
gallium nitride crack
low temperature aluminum nitride
interlayer
silicon
Experimental study of a pulsed ytterbium-doped fibre laser with fast and slow saturable absorbers in a linear cavity
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 7, 页码: 1790-1792
Gan Y (Gan Yu)
;
Xiang WH (Xiang Wang-Hua)
;
Zhou XF (Zhou Xiao-Fang)
;
Zhang GZ (Zhang Gui-Zhong)
;
Zhang B (Zhang Bing)
;
Wang YG (Wang Yong-Gang)
;
Ma XY (Ma Xiao-Yu)
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
MODE-LOCKING
RING LASER
LOW-TEMPERATURE
GENERATION
GAAS
Electronic structure of ZnO wurtzite quantum wires
期刊论文
european physical journal b, 2006, 卷号: 49, 期号: 4, 页码: 415-420
Xia JB (Xia J. B.)
;
Zhanga XW (Zhang X. W.)
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  |  
浏览/下载:26/0
  |  
提交时间:2010/04/11
LOW-TEMPERATURE GROWTH
BINDING-ENERGIES
NANOWIRE ARRAYS
PHOTOLUMINESCENCE
PHOTODETECTORS
SPECTROSCOPY
SAPPHIRE
CRYSTAL
GAN
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers
期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH
;
Chan NH
;
Fong WK
;
Zhu CF
;
Ng SW
;
Lui HF
;
Tong KY
;
Surya C
;
Lu LW
;
Ge WK
收藏
  |  
浏览/下载:129/0
  |  
提交时间:2010/08/12
deep level transient Fourier spectroscopy
(DLTFS)
gallium nitride (GaN)
intermediate-temperature buffer layer (ITBF)
low-frequency noise
RESONANT-TUNNELING DIODES
GENERATION-RECOMBINATION NOISE
RANDOM-TELEGRAPH NOISE
ULTRAVIOLET PHOTODETECTORS
DEVICES
Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
会议论文
2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997
作者:
Liu J
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
GaAs/AlAs
superlattices
transport
tunnelling
Landau level
NEGATIVE DIFFERENTIAL CONDUCTIVITY
LOW-FIELD MOBILITY
SEMICONDUCTOR SUPERLATTICE
TEMPERATURE-DEPENDENCE
CONDUCTANCE
TRANSPORT
LOCALIZATION
MINIBANDS
Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)
期刊论文
surface science, 1997, 卷号: 381, 期号: 1, 页码: 1-11
Ranke W
;
Xing YR
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/17
adsorption kinetics
low energy electron diffraction
low index single crystal surfaces
silicon
surface structure
morphology
roughness
and topography
vicinal single crystal surfaces
visible and ultraviolet photoelectron spectroscopy
water
SCANNING-TUNNELING-MICROSCOPY
CYLINDRICAL SILICON CRYSTAL
MILLER INDEX SURFACES
ROOM-TEMPERATURE
VICINAL SURFACES
ATOMIC-STRUCTURE
H2O
SI(100)
CHEMISORPTION
LEED
Effects of point defects on lattice parameters of semiconductors
期刊论文
physical review b, 1996, 卷号: 54, 期号: 12, 页码: 8516-8521
Chen NF
;
Wang YT
;
He HJ
;
Lin LY
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/17
MOLECULAR-BEAM EPITAXY
GAAS SINGLE-CRYSTALS
LOW-TEMPERATURE GAAS
DOPED GAAS
LAYERS
CARBON
DIFFRACTOMETER
GROWTH
SI
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