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Grown mechanism of beta-FeSi2 by reactive deposition epitaxy 期刊论文
PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, 1995, 期号: 0, 页码: A230-A232
Wang,LW; Lin,CL; Shen,QW; Ni,RS; Chen,XD; Zou,SC; Ostling,M
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