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科研机构
半导体研究所 [25]
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期刊论文 [22]
会议论文 [3]
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2015 [1]
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半导体物理 [25]
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure
期刊论文
journal of applied physics, 2015, 卷号: 117, 期号: 1, 页码: 014304
P. Y. Zhou
;
X. F. Wu
;
K. Ding
;
X. M. Dou
;
G. W. Zha
;
H. Q. Ni
;
Z. C. Niu
;
H. J. Zhu
;
D. S. Jiang
;
C. L. Zhao
;
B. Q. Sun
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2016/03/29
A high speed 1000 fps CMOS image sensor with low noise global shutter pixels
期刊论文
science china-information sciences, 2014, 卷号: 57, 期号: 4, 页码: 042405
Zhou, YF
;
Cao, ZX
;
Qin, Q
;
Li, QL
;
Shi, C
;
Wu, NJ
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2015/04/02
10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 1, 页码: 261-266
作者:
Pan JQ
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  |  
浏览/下载:188/2
  |  
提交时间:2010/04/11
ultra-low-pressure
selective area growth
integrated optoelectronics
ultra short optical pulse
DFB LASER
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
会议论文
international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002
Lan Q
;
Niu ZC
;
Zhou DY
;
Kong YC
;
Wang XD
;
Miao ZH
;
Feng SL
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/11/15
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
期刊论文
physica e-low-dimensional systems & nanostructures, 2003, 卷号: 17, 期号: 1-4, 页码: 114-116
Lan Q
;
Niu ZC
;
Zhou DY
;
Kong YC
;
Wang XD
;
Miao ZH
;
Feng SL
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  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
quantum dots
molecular beam epitaxy
photoluminescence
A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
chinese physics, 2003, 卷号: 12, 期号: 1, 页码: 97-99
Kong YC
;
Zhou DY
;
Lan Q
;
Liu JL
;
Miao ZH
;
Feng SL
;
Niu ZC
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/08/12
quantum dots
electroluminescence
state filling effect
OPTICAL-PROPERTIES
WAVELENGTH
EMISSION
LASER
GAAS
DEPENDENCE
LAYER
Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy
期刊论文
chinese physics, 2003, 卷号: 12, 期号: 2, 页码: 218-221
Zhou DY
;
Lan Q
;
Kong YC
;
Miao ZH
;
Feng SL
;
Niu ZC
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  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
molecular beam epitaxy (MBE) step bunching
InGaAs
quantum wire
SURFACE-DIFFUSION
GROWTH
DOTS
Synthesis of composite AIN powder mixed with sintering additives by the Lanxide method
期刊论文
journal of inorganic materials, 2003, 卷号: 18, 期号: 6, 页码: 1351-1356
Lin ZL
;
Zheng XH
;
Wang Q
;
Zhou ML
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  |  
浏览/下载:48/20
  |  
提交时间:2010/03/09
AlN powder
Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials
期刊论文
physical review b, 2002, 卷号: 65, 期号: 12, 页码: art.no.125325
作者:
Tan PH
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  |  
浏览/下载:76/4
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
ALXGA1-XAS ALLOYS
GAAS
PHOTOLUMINESCENCE
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/10/29
molecular beam epitaxy
InGaAs islands
photolumineseence
line-width
1.3 MU-M
INAS/GAAS QUANTUM DOTS
OPTICAL-PROPERTIES
CAP LAYER
GAAS
LUMINESCENCE
STRAIN
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