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The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui)
收藏  |  浏览/下载:130/35  |  提交时间:2010/03/08
GaN  


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