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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706 Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H. 收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09 Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.) 收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02 Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文 journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48 Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.); Li L (Li, L.); Wu LL (Wu, L. L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Li ZC (Li, Z. C.); Fan YM (Fan, Y. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.) 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20 Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文 semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017 Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.) 收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02 Chemical composition and elastic strain in AlInGaN quaternary films 期刊论文 thin solid films, 2006, 卷号: 515, 期号: 4, 页码: 1429-1432 Zhou, SQ (Zhou, Shengqiang); Wu, MF (Wu, M. F.); Yao, SD (Yao, S. D.); Liu, JP (Liu, J. P.); Yang, H (Yang, H.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 Rutherford backscattering spectroscopy   Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering 期刊论文 superlattices and microstructures, 2006, 卷号: 40, 期号: 3, 页码: 137-143 Zhou SQ (Zhou Shengqiang); Wu MF (Wu M. F.); Yao SD (Yao S. D.); Zhang BS (Zhang B. S.); Yang H (Yang H.) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 nitride semiconductors  superlattice  Rutherford backscattering/channeling  transmission electron microscopy  x-ray diffraction  MULTIPLE-QUANTUM WELLS  OPTICAL-PROPERTIES  INGAN/GAN  STRAIN  INTERFACE  GROWTH  GAN