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| XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:31/0  |  提交时间:2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:26/0  |  提交时间:2017/03/10 |
| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:21/0  |  提交时间:2017/03/10 |
| GaN high electron mobility transistors with AlInN back barriers 期刊论文 journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19 X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10 |
| Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文 vacuum, 2016, 卷号: 129, 页码: 99-104 J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2017/03/10 |
| Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文 journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86 J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2016/03/23 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文 journal of applied physics, 2015, 卷号: 117, 页码: 055709 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:18/0  |  提交时间:2016/03/23 |
| Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文 applied optics, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711 X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; L. C. LE; W. LIU; X. G. HE; X. J. LI; F. LIANG; L. Q. ZHANG; J. Q. LIU; H. YANG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2016/03/23 |
| The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文 physica status solidi a-applications and materials science, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943 P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:12/0  |  提交时间:2016/03/22 |
| Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth 期刊论文 thin solid films, 2015, 卷号: 586, 页码: 54-57 J.J.Wen; Z. Liu; T.W. Zhou; C.L. Xue; Y.H. Zuo; C.B. Li; Q.M. Wang; B.W. Cheng
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:32/0  |  提交时间:2016/03/22 |