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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A reconfigurable microwave photonic filter with flexible tunability using a multi-wavelength laser and a multi-channel phase-shifted fiber Bragg grating 期刊论文 Optics Communications, 2017, 卷号: 407, 页码: 27–32 作者:  Nuannuan Shi;  Tengfei Hao;  Wei Li;  Ninghua Zhu;  Ming Li 收藏  |  浏览/下载：16/0  |  提交时间：2018/11/30 Real-Time Optical Spectrum Fourier Transform with Time Bandwidth Product Compression 期刊论文 IEEE Photonics Journal, 2017, 卷号: 10, 期号: 1, 页码: 1-14 作者:  Hao Sun;  Xinyi Zhu;  Wei Li;  Ninghua Zhu;  Ming Li 收藏  |  浏览/下载：7/0  |  提交时间：2018/11/30 Continuously Wavelength-Tunable Laser Source Using a Self-Injected Fabry-Perot Laser Diode 期刊论文 ieee photonics technology letters, 2011, 卷号: 23, 期号: 6, 页码: 332-334 Wu H (Wu Hao); Zhu NH (Zhu Ning Hua); Man JW (Man Jiang Wei); Yuan HQ (Yuan Hai Qing) 收藏  |  浏览/下载：14/0  |  提交时间：2012/02/23 Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.252101 Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Liang JW (Liang J. W.); Hao XP (Hao X. P.); Wei L (Wei L.); Li X (Li X.); Li XY (Li X. Y.); Gong HM (Gong H. M.) 收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11 YELLOW LUMINESCENCE  ELECTRON-BEAM  VACANCIES   Photoluminescence spectrum study of the GaAs/Si epilayer grown by using a thin amorphous Si film as buffer layer 期刊论文 jpn.j.appl.phys, 1995, 卷号: 34, 页码: l900-l902 Mao –Sheng Hao, Jun-Wu Liang, Lian-Xi Zheng, Li-Seng Deng, Zi-Bao Xiao, Xiong-Wei Hu 收藏  |  浏览/下载：12/0  |  提交时间：2014/05/14