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Optimizing boron implantation dose of HgCdTe infrared detectors 期刊论文
ACTA PHYSICA SINICA, 2004, 卷号: 53, 期号: 3, 页码: 911-914
Chen, GB; Lu, W; Cai, WY; Li, ZF; Chen, XS; Hu, XN; He, L; Shen, XC
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/24
Study of the current-voltage characteristics of n-on-p junction fabricated by proton-implanted molecular beam epitaxial Hg1-xCdxTe 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 6, 页码: 1496-1499
Chen, GB; Li, ZF; Cai, WY; He, L; Hu, XN; Lu, W; Shen, XC
收藏  |  浏览/下载:11/0  |  提交时间:2012/03/24
HGCDTE  
Hot-electron magneto-transport in InSb 期刊论文
COMMUNICATIONS IN THEORETICAL PHYSICS, 1996, 卷号: 26, 期号: 1, 页码: 17-22
Weng, XM; LEI, XL(雷啸霖)
收藏  |  浏览/下载:16/0  |  提交时间:2012/03/25
Optical and photoelectrical properties of beta-FeSi2 thin films 期刊论文
NARROW GAP SEMICONDUCTORS 1995, 1995, 期号: 144, 页码: 90-94
Shen, WZ; Shen, SC; Tang, WG; Wang, LW
收藏  |  浏览/下载:10/0  |  提交时间:2012/03/25
MOCVD GAINASSB HETEROSTRUCTURE MATERIALS FOR 2-4-MU-M PHOTODETECTORS 期刊论文
COMPOUND SEMICONDUCTORS 1994, 1995, 期号: 141, 页码: 603-606
WEI,GY; PENG,RW; WU,W
收藏  |  浏览/下载:18/0  |  提交时间:2012/03/25
HREM characterization of ion beans synthesized ternary silicides in (111) silicon 期刊论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 卷号: 146, 页码: 533-536
Tavares, J; Bender, H; Wu, MF; Vantomme, A; Langouche, G; Lin, C
收藏  |  浏览/下载:24/0  |  提交时间:2012/03/25
CHARACTERIZATION OF CDTE AND HGCDTE EPILAYERS BY HOT-WALL MOCVD 期刊论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, 期号: 135, 页码: 347-350
PENG,RW; DING,YQ; WEI,GY
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/25
A NONEQUILIBRIUM APPROACH TO COUPLED-MODE-INDUCED HOT-ELECTRON ENERGY-LOSS RATE 期刊论文
COMMUNICATIONS IN THEORETICAL PHYSICS, 1993, 卷号: 19, 期号: 4, 页码: 403-408
WU, MW; LEI, XL(雷啸霖)
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/25
DETERMINATION OF THE UNIT-CELL FOR AN EPITAXIAL LAYER OF HG1-XCDXTE DEPOSITED ON GAAS 期刊论文
AUSTRALIAN JOURNAL OF PHYSICS, 1992, 卷号: 45, 期号: 6, 页码: 773-779
ZHU, NC; STEVENSON, AW; LI, RS
收藏  |  浏览/下载:8/0  |  提交时间:2012/03/25
PHOTOQUENCHING OF ELECTRONIC PARAMAGNETIC-RESONANCE ASGA AND METASTABLE MECHANISM OF EL2 DEFECT IN GAAS 期刊论文
CHINESE PHYSICS, 1989, 卷号: 9, 期号: 4, 页码: 976-981
ZOU, YX; WANG, GY
收藏  |  浏览/下载:8/0  |  提交时间:2012/03/25


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