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CORC

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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05
Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates 期刊论文
applied surface science, 2009, 卷号: 255, 期号: 6, 页码: 3664-3668
Gao HY; Yan FW; Zhang Y; Li JM; Zeng YP; Wang JX
收藏  |  浏览/下载：165/24  |  提交时间：2010/03/08
Effect of CO on characteristics of AlGaN/GaN Schottky diode 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3025-3027
Feng, C; Wang, XL; Yang, CB; Xiao, HL; Zhang, ML; Jiang, LJ; Tang, J; Hu, GX; Wang, JX; Wang, ZG
收藏  |  浏览/下载：78/1  |  提交时间：2010/03/08
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Investigation of Mn-implanted n-type Ge 期刊论文
journal of crystal growth, 2004, 卷号: 265, 期号: 3-4, 页码: 466-470
作者:  Yin ZG
收藏  |  浏览/下载：104/34  |  提交时间：2010/03/09
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文
journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128
Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW
收藏  |  浏览/下载：126/0  |  提交时间：2010/08/12
Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells 期刊论文
semiconductor science and technology, 2001, 卷号: 16, 期号: 10, 页码: 822-825
作者:  Tan PH
收藏  |  浏览/下载：73/4  |  提交时间：2010/08/12
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH
收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
Liu JP; Huang DD; Li JP; Sun DZ; Kong MY
收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12
SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS 期刊论文
physical review b, 1994, 卷号: 49, 期号: 24, 页码: 17452-17455
DU QH; WANG ZG; MAO JM
收藏  |  浏览/下载：24/0  |  提交时间：2010/11/15

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