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科研机构
半导体研究所 [26]
内容类型
期刊论文 [23]
会议论文 [3]
发表日期
2011 [3]
2010 [1]
2009 [3]
2008 [1]
2006 [2]
2005 [1]
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半导体材料 [26]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Wang, Liancheng
;
Guo, Enqing
;
Liu, Zhiqiang
;
Yi, Xiaoyan
;
Wang, Guohong
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/06/14
Gallium nitride
Leakage currents
Light emission
Light emitting diodes
Metallizing
Polarization
Testing
Water analysis
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy
期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ
;
Chang BK
;
Yang Z
;
Niu J
;
Xiong YJ
;
Shi F
;
Guo H
;
Zeng YP
收藏
  |  
浏览/下载:66/25
  |  
提交时间:2010/03/08
GAAS PHOTOCATHODES
GALLIUM-ARSENIDE
ALXGA1-XAS
DIFFUSION
SURFACE
ENERGY
Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing
期刊论文
crystal research and technology, 2009, 卷号: 44, 期号: 2, 页码: 215-220
Islam MR
;
Chen NF
;
Yamada M
收藏
  |  
浏览/下载:224/44
  |  
提交时间:2010/03/08
Raman scattering
ferromagnetic
semiconductor
GaMnAs
Mn ions implantation
deposition
Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015415
作者:
Jia CH
收藏
  |  
浏览/下载:173/14
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
THIN-FILMS
ZINC-OXIDE
PHOTOLUMINESCENCE
TEMPERATURE
SAPPHIRE
SURFACE
GROWTH
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 6, 页码: 2153-2158
Zhang CG
;
Chen WD
;
Bian LF
;
Song SF
;
Hsu CC
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2010/04/11
gallium nitride films
gallium oxide
carbonized-reaction
NITRIDE THIN-FILMS
TEMPERATURE
SUBSTRATE
SI(111)
Al2O3 : Cr3+ nanotubes synthesized via homogenization precipitation followed by heat treatment
期刊论文
journal of physical chemistry b, 2006, 卷号: 110, 期号: 32, 页码: 15749-15754
Cheng BC (Cheng Baochang)
;
Qu SC (Qu Shengchun)
;
Zhou HY (Zhou Huiying)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/04/11
GALLIUM NITRIDE NANOTUBES
SINGLE-CRYSTALLINE
ALUMINA NANOTUBES
ALPHA-AL2O3 NANOWIRES
OXIDE NANOTUBES
ROUTE
FILMS
NANOSTRUCTURES
PHOTOLUMINESCENCE
TEMPERATURE
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