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科研机构
半导体研究所 [14]
内容类型
期刊论文 [13]
会议论文 [1]
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2014 [1]
2012 [1]
2011 [1]
2010 [2]
2007 [1]
2006 [5]
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光电子学 [14]
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Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties
期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 7, 页码: 076801
Liang, JR
;
Wu, MJ
;
Hu, M
;
Liu, J
;
Zhu, NW
;
Xia, XX
;
Chen, HD
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2015/03/25
Electric field-induced phase transition of nanoparticle vanadium dioxide thin films prepared by radio frequency magnetron sputtering
期刊论文
nami jishu yu jingmi gongcheng/nanotechnology and precision engineering, 2012, 卷号: 10, 期号: 2, 页码: 160-164
Liang, Ji-Ran
;
Hu, Ming
;
Kan, Qiang
;
Hou, Shun-Bao
;
Liang, Xiu-Qin
;
Chen, Hong-Da
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/05/07
External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor
期刊论文
journal of physical chemistry c, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
Li WW (Li W. W.)
;
Zhu JJ (Zhu J. J.)
;
Liang JR (Liang J. R.)
;
Hu ZG (Hu Z. G.)
;
Liu J (Liu J.)
;
Chen HD (Chen H. D.)
;
Chu JH (Chu J. H.)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/02/21
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.)
;
Jiang DS (Jiang D. S.)
;
Jahn U (Jahn U.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Liu ZS (Liu Z. S.)
;
Zhang SM (Zhang S. M.)
;
Qiu YX (Qiu Y. X.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/12/12
InGaN
Dislocation
Metalorganic chemical vapor deposition
High resolution X-ray diffraction
Cathodoluminescence
MISFIT DISLOCATIONS
QUANTUM-WELLS
BAND-GAP
EPILAYERS
GENERATION
ALLOYS
INN
PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS
期刊论文
journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 6, 页码: 457-460
作者:
Li GK
收藏
  |  
浏览/下载:48/3
  |  
提交时间:2011/07/05
vanadium dioxide thin film
infrared transmission spectrum
rapid elevating temperatue
THIN-FILMS
VO2 FILMS
TEMPERATURE
FABRICATION
Optical analysis of dislocation-related physical processes in GaN-based epilayers
期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng)
;
Zhao, DG (Zhao, De-Gang)
;
Yang, H (Yang, Hui)
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng)
;
Zhang BS (Zhang Bao-Shun)
;
Zhang JC (Zhang Ji-Cai)
;
Zhu JJ (Zhu Jian-Jun)
;
Wang YT (Wang Yu-Tian)
;
Chen J (Chen Jun)
;
Liu W (Liu Wei)
;
Jiang DS (Jiang De-Sheng)
;
Yao DZ (Yao Duan-Zheng)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
HIGH-QUALITY GAN
ALN BUFFER LAYER
NUCLEATION LAYER
PHASE EPITAXY
EVOLUTION
DENSITY
SILICON
STRESS
SI
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.)
;
Wang, H (Wang, H.)
;
Jiang, DS (Jiang, D. S.)
;
Jin, RQ (Jin, R. Q.)
;
Huang, Y (Huang, Y.)
;
Zhang, SM (Zhang, S. M.)
;
Yang, H (Yang, H.)
;
Jahn, U (Jahn, U.)
;
Ploog, KH (Ploog, K. H.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/29
LIGHT-EMITTING-DIODES
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917
作者:
Jiang DS
;
Zhu JJ
;
Li XY
;
Zhang SM
;
Zhao DG
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
X-RAY-DIFFRACTION
MG-DOPED GAN
UNDOPED GAN
PHOTOLUMINESCENCE BANDS
THREADING DISLOCATIONS
POSITRON-ANNIHILATION
GROWTH STOICHIOMETRY
GALLIUM NITRIDE
Study on Raman spectra of GaMnAs
期刊论文
journal of infrared and millimeter waves, 2006, 卷号: 25, 期号: 3, 页码: 207-212
Ma BS
;
Wang WJ
;
Su FH
;
Den JJ
;
Jiang CP
;
Liu HL
;
Ding K
;
Zhao JH
;
Li GH
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
GaMnAs
Raman spectrum
coupled plamon-LO-phonon mode
hole density
GAAS
(GA
MOCVD
FILMS
GAN
MN)AS
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