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Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire 期刊论文
journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98
Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H
收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H
收藏  |  浏览/下载：49/3  |  提交时间：2011/07/05
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：72/4  |  提交时间：2011/07/05
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X; Gu YX; Wang Q; Wei X; Chen LH
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/06
A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏  |  浏览/下载：66/7  |  提交时间：2011/07/05
A novel temperature sensor based on a long period fiber grating with a unique double-cladding layer structure 期刊论文
2011, 卷号: 3, 页码: v3281-v3283
Zhao, Qiang; Qu, Yi; Wang, Yongjie; Li, Fang
收藏  |  浏览/下载：10/0  |  提交时间：2012/06/14
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：28/0  |  提交时间：2010/11/02
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：231/10  |  提交时间：2010/04/13

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