CORC

浏览/检索结果: 共13条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Mitigation of Pores Generation at Overlapping Zone during Laser Cladding 期刊论文
journal of materials processing technology, 2015, 卷号: 216, 页码: 369–374
Chunyang Zhou; Shusen Zhao; Yibo Wang; Falan Liu; Wenyan Gao; Xuechun Lin
收藏  |  浏览/下载:16/0  |  提交时间:2016/04/08
A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏  |  浏览/下载:66/7  |  提交时间:2011/07/05
Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators 期刊论文
optics express, 2010, 卷号: 18, 期号: 12, 页码: 13057-13062
Yang YD (Yang Yue-De); Huang YZ (Huang Yong-Zhen); Guo WH (Guo Wei-Hua); Lu QY (Lu Qiaoyin); Donegan JF (Donegan John F.)
收藏  |  浏览/下载:79/1  |  提交时间:2010/07/05
LASERS  
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载:75/2  |  提交时间:2010/05/24
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载:91/41  |  提交时间:2010/03/08
Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing 期刊论文
chinese optics letters, 2008, 卷号: 6, 期号: 2, 页码: 108-111
Li AK; Wang ZM; Liu JJ; Zeng XY; Wang CX; Chen HD
收藏  |  浏览/下载:84/2  |  提交时间:2010/03/08
Study on Raman spectra of GaMnAs 期刊论文
journal of infrared and millimeter waves, 2006, 卷号: 25, 期号: 3, 页码: 207-212
Ma BS; Wang WJ; Su FH; Den JJ; Jiang CP; Liu HL; Ding K; Zhao JH; Li GH
收藏  |  浏览/下载:41/0  |  提交时间:2010/04/11
High-Power Distributed Feedback Laser Diodes Emitting at 820nm 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 966-969
作者:  Chen Lianghui
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/23
Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F 会议论文
conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005
Xu Y; Li YZ; Song GF; Gan QQ; Cao Q; Guo L; Chen LH
收藏  |  浏览/下载:108/26  |  提交时间:2010/03/29
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure 会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Xu Y; Zhu XP; Ye XJ; Kang XN; Cao Q; Guo L; Chen LH
收藏  |  浏览/下载:17/1  |  提交时间:2010/10/29


©版权所有 ©2017 CSpace - Powered by CSpace