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Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文
Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
作者:  Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:23/0  |  提交时间:2010/10/29
Metal-semiconductor-metal ultraviolet photodetector based on GaN 期刊论文
science in china series g-physics astronomy, 2003, 卷号: 46, 期号: 2, 页码: 198-203
Wang J; Zhao DA; Liu ZS; Feng G; Zhu JJ; Shen XM; Zhang BS; Yang H
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12


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