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Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
作者:  Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12
High temperature superconducting (HTS) C-band oscillator with phase noise of-134 dBc/Hz 期刊论文
科学通报 英文版, 2002
Li, H; He, AS; Shi, TF; Gong, ZL; Li, SZ; Sun, YW; He, YS
收藏  |  浏览/下载:2/0  |  提交时间:2015/11/11
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:129/0  |  提交时间:2010/08/12


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