QQ客服 官方微博 反馈留言

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2009    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of mode coupling in a microdisk resonator for realizing directional emission 期刊论文 optics express, 2009, 卷号: 17, 期号: 25, 页码: 23010-23015 Yang, YD (Yang, Yue-De); Wang, SJ (Wang, Shi-Jiang); Huang, YZ (Huang, Yong-Zhen) 收藏  |  浏览/下载：235/26  |  提交时间：2010/03/08 LASERS   Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers 期刊论文 ieee journal of quantum electronics, 2009, 卷号: 45, 期号: 12, 页码: 1529-1536 Yang, YD (Yang, Yue-De); Huang, YZ (Huang, Yong-Zhen); Wang, SJ (Wang, Shi-Jiang) 收藏  |  浏览/下载：218/48  |  提交时间：2010/03/08 Equilateral triangle resonator (ETR)   Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015108 作者:  Wang H;  Zhao DG;  Zhang SM;  Yang H;  Yang H 收藏  |  浏览/下载：170/40  |  提交时间：2010/03/08 SURFACE-MORPHOLOGY  DETECTORS  GROWTH   Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文 acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420 作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG 收藏  |  浏览/下载：50/4  |  提交时间：2010/03/08 InN  dislocation  carrier origination  localization   Analysis of mode characteristics for equilateral-polygonal resonators with a center hole 期刊论文 journal of the optical society of america b-optical physics, 2009, 卷号: 26, 期号: 12, 页码: 2449-2454 Wang, SJ (Wang, Shi-Jiang); Yang, YD (Yang, Yue-De); Huang, YZ (Huang, Yong-Zhen) 收藏  |  浏览/下载：179/58  |  提交时间：2010/03/08 DIRECTIONAL EMISSION   GaN-based violet laser diodes grown on free-standing GaN substrate 期刊论文 chinese physics b, 2009, 卷号: 18, 期号: 12, 页码: 5350-5353 作者:  Wang H;  Zhu JJ;  Yang H;  Yang H;  Jiang DS 收藏  |  浏览/下载：27/0  |  提交时间：2010/04/05 GaN laser diode  mounting configuration  active region temperature  CONTINUOUS-WAVE OPERATION   Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410 作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  QUANTUM DOTS  BAND-GAP  GROWTH  SURFACES   Room temperature continuous-wave electrically-injected InGaAsP triangle and square microlasers 会议论文 international conference on optical instruments and technology - microelectronic and optoelectronic devices and integration, beijing, peoples r china, nov 16-19, 2008 Huang YZ (Huang Yong-Zhen); Wang SJ (Wang Shi-Jiang); Che KJ (Che Kai-Jun); Yang YD (Yang Yue-De); Xiao JL (Xiao Jin-Long); Hu YH (Hu Yong-Hong); Du Y (Du Yun) 收藏  |  浏览/下载：61/6  |  提交时间：2011/07/15 The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：92/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE   Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075004 作者:  Wang H;  Yang H;  Yang H;  Zhao DG;  Wang YT 收藏  |  浏览/下载：48/1  |  提交时间：2010/03/08 ELECTRON-TRANSPORT  PHASE EPITAXY  NITRIDE INN  BAND-GAP