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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2007    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117 Wang, XL (Wang, X. L.); Zhao, DG (Zhao, D. G.); Jahn, U (Jahn, U.); Ploog, K (Ploog, K.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.); Liang, JW (Liang, J. W.) 收藏  |  浏览/下载：69/0  |  提交时间：2010/03/29 PHOTODIODES   Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文 journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H 收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  MG-DOPED GAN  UNDOPED GAN  PHOTOLUMINESCENCE BANDS  THREADING DISLOCATIONS  POSITRON-ANNIHILATION  GROWTH STOICHIOMETRY  GALLIUM NITRIDE   Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition 期刊论文 materials letters, 2007, 卷号: 61, 期号: 2, 页码: 516-519 作者:  Wang H;  Wang YT;  Wang LL;  Yang H;  Wang H 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 X-ray diffraction   Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298 Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui) 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255 Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 STRESS   Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914 Liu W; Zhu JJ; Jiang S; Yang H; Wang JF 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106 作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM 收藏  |  浏览/下载：54/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文 physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891 Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui) 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文 journal of crystal growth, 2007, 卷号: 303, 期号: 2, 页码: 414-418 作者:  Zhang SM;  Yang H;  Zhu JJ;  Jiang DS;  Yang H 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/29 V/III ratio   Enhanced infrared absorption of spatially ordered quantum dot arrays 期刊论文 infrared physics & technology, 2007, 卷号: 50, 期号: 2-3, 页码: 162-165 作者:  Jiang DS;  Chen LH;  Ma WQ 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 quantum dots