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CORC

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Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.  
Nanocrystalline diamond films deposited by electron assisted hot filament chemical vapor deposition 会议论文
JOURNAL OF RARE EARTHS, 2006-03-01
作者:  Wu, NC[1];  Xia, YB[2];  Tan, SH[3];  Wang, LJ[4]
收藏  |  浏览/下载：10/0  |  提交时间：2019/05/10
Spin correlated scattering and metal-semiconductor transition in CMR manganites 会议论文
Advances in Cryogenic Engineering, Vol 52A & 52B
作者:  Zhang, Jincang[1];  Xu, Yan[2];  Chen, Zhenping[3];  Cao, Guixin[4];  Xue, Yuncai[5]
收藏  |  浏览/下载：2/0  |  提交时间：2019/05/10
Effects of curing agents on the conductivity of isotropical conductive adhesives (ICAs) 会议论文
2006 INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND PACKAGING, VOLS 1-3, 2006-12-11
作者:  Lin, Xuechun[1];  Li, Qinghua[2];  Zhang, Jianhua[3]
收藏  |  浏览/下载：7/0  |  提交时间：2019/05/10
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Li, Z (Li, Z.); Li, CJ (Li, C. J.)
收藏  |  浏览/下载：304/15  |  提交时间：2010/03/29
DLTS  
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ
收藏  |  浏览/下载：115/18  |  提交时间：2010/03/29
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM
收藏  |  浏览/下载：203/36  |  提交时间：2010/03/29
MOCVD  
Investigation on relationship between fabric and hydration behavior with combined resistivity-heat release method 会议论文
作者:  He, Zhen;  Luo, Q.;  Liang, W. Q.;  Yang, H. Q.
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05
MEMS Phase Shifters on Low-resistivity Silicon Wafer 会议论文
2006 IEEE International Conference on Mechatronics and Automation, ICMA 2006, June 25, 2006 - June 28, 2006
作者:  Guo, F.;  Zhang, Y.;  Lin, J.;  Kong, J.;  Zhu, S.
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31
Laser fabrication of low resistivity electrode on glass 会议论文
12th International Manufacturing Conference in China, Xian, PEOPLES R CHINA, 2006-09-21
作者:  Wu, Dongjiang;  Zhuang, Juan;  Wang, Xuyue;  Kang, Renke;  Zhao, Fuling
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/27

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