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Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 3, 页码: 230-236
Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:40/16  |  提交时间:2010/03/17
A model for scattering due to interface roughness in finite quantum wells 期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
作者:  Han XX
收藏  |  浏览/下载:62/0  |  提交时间:2010/04/11


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