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Electronic properties of sulfur passivated undoped-n(+) type gaas surface studied by photoreflectance 期刊论文
Applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
作者:  Jin, P;  Pan, SH;  Li, YG;  Zhang, CZ;  Wang, ZG
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Effect of inas quantum dots on the fermi level pinning of undoped-n(+) type gaas surface studied by contactless electroreflectance 期刊论文
Journal of applied physics, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
作者:  Jin, P;  Meng, XQ;  Zhang, ZY;  Li, CM;  Xu, B
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12
Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 94, 期号: 8, 页码: 4847
Xiao, WD; Guo, QL; Xue, QK; Wang, EG
收藏  |  浏览/下载:15/0  |  提交时间:2013/09/17
Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
journal of applied physics, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
作者:  Li CM;  Jin P;  Xu B
收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12
Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文
applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
作者:  Jin P
收藏  |  浏览/下载:460/3  |  提交时间:2010/08/12


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