QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2001    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：82/5  |  提交时间：2010/08/12 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 501-505 作者:  Jiang DS 收藏  |  浏览/下载：147/24  |  提交时间：2010/08/12 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN   Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：101/8  |  提交时间：2010/08/12 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   Resonant Raman scattering of a-SiNx : H 期刊论文 materials letters, 2001, 卷号: 47, 期号: 1-2, 页码: 50-54 Wang Y; Yue RF; Han HX; Liao XB; Wang YQ; Diao HW; Kong GL 收藏  |  浏览/下载：65/0  |  提交时间：2010/08/12 a-Sin(x): H films  resonant Raman scattering  quantum confinement model  POLYCRYSTALLINE DIAMOND FILMS  AMORPHOUS-SILICON  HYDROGENATED MICROCRYSTALLINE  SPECTROSCOPY  ALLOYS   Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS