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Isothermal crystallization kinetics of PEO in poly(ethylene terephthalate)-poly(ethylene oxide) segmented copolymers. I. Effect of the sofi-block length 期刊论文
JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2000, 卷号: 38, 期号: 24, 页码: 3230-3238
作者:  Kong, XH;  Tan, SS;  Yang, XN;  Li, G;  Zhou, EL
收藏  |  浏览/下载:20/0  |  提交时间:2019/04/09
Tectonic facies and the archipelago-accretion process of the West Kunlun, China 期刊论文
SCIENCE IN CHINA SERIES D-EARTH SCIENCES, 2000, 卷号: 43, 页码: 134-143
作者:  Xiao, WJ;  Hou, QL;  Li, JL;  Windley, BF;  Hao, J
收藏  |  浏览/下载:11/0  |  提交时间:2018/09/26
Tectonic facies and the archipelago-accretion process of the West Kunlun, China 期刊论文
SCIENCE IN CHINA SERIES D-EARTH SCIENCES, 2000, 卷号: 43, 页码: 134-143
作者:  Xiao, WJ;  Hou, QL;  Li, JL;  Windley, BF;  Hao, J
收藏  |  浏览/下载:16/0  |  提交时间:2018/09/26
The growth of si/sige/si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
Journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 457-460
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/12
Influence of phosphine flow rate on si growth rate in gas source molecular beam epitaxy 期刊论文
Journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY
收藏  |  浏览/下载:24/0  |  提交时间:2019/05/12
Temperature quenching mechanisms for photoluminescence of mbe-grown chlorine-doped znse epilayers 期刊论文
Journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 548-553
作者:  Wang, SZ;  Xie, SW;  Pang, QJ;  Zheng, H;  Xia, YX
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
Linking and existence results for perturbations of the p-Laplacian 期刊论文
NONLINEAR ANALYSIS-THEORY METHODS & APPLICATIONS, 2000, 卷号: 42, 期号: 8, 页码: 1413-1420
作者:  Fan, XL;  Li, ZC
收藏  |  浏览/下载:4/0  |  提交时间:2015/12/16
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY
收藏  |  浏览/下载:7/0  |  提交时间:2021/02/02
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY
收藏  |  浏览/下载:8/0  |  提交时间:2021/02/02
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 457-460
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY
收藏  |  浏览/下载:17/0  |  提交时间:2021/02/02


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