中国开放科研知识云: 检索

验证码:

换一张

忘记密码？记住我

取消登录

CORC

首页
科研机构
检索
知识图谱
申请加入
托管服务

在结果中检索

科研机构

清华大学 [8]

西安交通大学 [6]

北京大学 [4]

湖南大学 [4]

华南理工大学 [2]

武汉大学 [2]

内容类型

期刊论文 [23]

会议论文 [7]

发表日期

知识图谱

CORC

已提交作品

待认领作品

已认领作品

未提交全文

浏览/检索结果: 共30条，第1-10条

帮助

已选(0)清除条数/页：排序方式：
	Utilizing fast ion conductor for single-crystal Ni-rich cathodes to achieve dual-functional modification of conductor network constructing and near-surface doping 期刊论文 Energy Storage Materials, 2022, 卷号: 52, 页码: 19-28 作者: Zhou, Xin'an; Zhang, Feilong; Fu, Xiaolan; Zhang, Ningshuang; Huang, Jin 收藏 \| 浏览/下载：28/0 \| 提交时间：2022/08/09 Aluminum compounds Cathodes Crystal structure Density functional theory Doping (additives) Electric discharges Electrolytes Lanthanum compounds Lithium compounds Lithium-ion batteries Metal ions Network layers Nickel oxide Niobium Niobium compounds Sintering Cutoff voltage Dual-functional modification Fast-ion conductors Functional modification High cut-off voltage High-voltages Interfacial instability Lini0.8co0.15al0.05O2 Near surfaces Ni-rich cathode
	Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 卷号: 52 作者: Yang, Chao; Gu, Zhenghao; Yin, Zhipeng; Qin, Fuwen; Wang, Dejun 收藏 \| 浏览/下载：11/0 \| 提交时间：2019/12/02 4H-SiC MOS capacitor bias temperature stress flatband voltage instability interfacial traps mobile ions
	Improved sensing of vertical velocity for vertical position control using loop voltage signals on EAST 期刊论文 FUSION ENGINEERING AND DESIGN, 2019, 卷号: 138, 期号: 无, 页码: 170-174 作者: Liu, Lei; Xiao, Bingjia; Mueller, Dennis; Yuan, Qiping 收藏 \| 浏览/下载：6/0 \| 提交时间：2020/05/21 Vertical instability control Signal-to-noise ratio Loop voltage Vertical velocity control
	A Fast Vth Measurement Technique for NBTI Behavior Characterization. 期刊论文 IEEE Electron Device Letters, 2018, 卷号: Vol.39 No.2, 页码: 172-175 作者: Yu, Xiao; Cheng, Ran; Liu, Wei; Qu, Yiming; Han, Jinghui 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/26 Logic gates NBTI Negative bias temperature instability pFinFETs reliability Stress Stress measurement Thermal variables control Time measurement trapping ultra-fast measurement Voltage measurement
	A Fast Vth Measurement (FVM) Technique for NBTI Behavior Characterization 期刊论文 IEEE Electron Device Letters, 2018, 卷号: Vol.39 No.2, 页码: 172-175 作者: Xiao Yu; Ran Cheng; Wei Liu; Yiming Qu; Jinghui Han 收藏 \| 浏览/下载：3/0 \| 提交时间：2019/12/26 Voltage measurement Stress Negative bias temperature instability Thermal variables control Logic gates Stress measurement Time measurement pFinFETs reliability NBTI ultra-fast measurement trapping
	A Fast $V_{th}$ Measurement (FVM) Technique for NBTI Behavior Characterization 期刊论文 IEEE Electron Device Letters, 2018, 卷号: Vol.39 No.2, 页码: 172-175 作者: Yu, X; Cheng, R; Liu, W; Qu, YM; Han, JH 收藏 \| 浏览/下载：9/0 \| 提交时间：2019/12/26 Voltage measurement Stress Negative bias temperature instability Thermal variables control Logic gates Stress measurement Time measurement pFinFETs reliability NBTI ultra-fast measurement trapping
	基于可见光图像处理的双射流直流电弧等离子体放电稳定性分析期刊论文 2016, 2016 金锋; 李鹏; 葛楠; JIN Feng; LI Peng; GE Nan 收藏 \| 浏览/下载：4/0
	Mechanism Analysis and Mitigation of Instability in Grid-Connected Voltage Source Inverter with LCL Filters Based on Terminal Impedance 会议论文作者: Liu, Teng; Liu, Zeng; Liu, Jinjun; Dou, Qingyun 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/12/02 instability mechanism LCL filters lag compensator impedance-based stability criterion grid-connected voltage sourece inverter
	One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Wang, Cuicui; Hu, Zhijin; He, Xin; Liao, Congwei; Zhang, Shengdong 收藏 \| 浏览/下载：3/0 \| 提交时间：2017/12/04 Active-matrix organic light-emitting diode (AMOLED) compensated pixel circuit diode-connected structure dual-gate (DG) amorphous indium-gallium-zinc-oxide thin-film transistor (a-IGZO TFT) ELECTRICAL INSTABILITY AMOLED DISPLAYS VOLTAGE BIAS SI
	Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Hu, Zhijin; Wang, Lisa Ling; Liao, Congwei; Zeng, Limei; Lee, Chang-Yeh; Lien, Alan; Zhang, Shengdong 收藏 \| 浏览/下载：4/0 \| 提交时间：2017/12/03 Amorphous silicon bipolar pulse bias stress (BPBS) thin-film transistor (TFT) threshold voltage shift (Delta V-TH) unipolar pulse bias stress (UPBS) THIN-FILM TRANSISTORS HYDROGENATED AMORPHOUS-SILICON INSTABILITY MECHANISMS ELECTRIC-FIELDS CONDUCTION NITRIDE STRESS DEPENDENCE MODEL

相关链接
欧盟学术资源开放存取平台
CALIS高校机构知识库
台湾学术机构典藏
香港机构知识库整合系统
中国科学院机构知识库网格系统

CORC
关于我们
服务条款
隐私条款

联系我们
0931-8270076
cspace@llas.ac.cn
China-OR

中文简体

©版权所有 ©2017 CSpace - Powered by CSpace